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SFH620A / SFH6206
Vishay Semiconductors
Optocoupler, Phototransistor Output, AC Input
Features
* Good CTR Linearity Depending on Forward Current * Isolation Test Voltage, 5300 VRMS * High Collector-emitter Voltage, VCEO = 70 V * Low Saturation Voltage * Fast Switching Times * Low CTR Degradation * Temperature Stable * Low Coupling Capacitance * * * *
e3
1 A/C 1 C/A 2
i179080
4C 3E
1
End-Stackable, .100 "(2.54 mm) Spacing High Common-Mode Interference Immunity Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
The couplers are end-stackable with 2.54 mm lead spacing. Creepage and clearance distances of > 8.0 mm are achieved with option 6. This version complies with IEC 60950 (DIN VDE 0805) for reinforced insulation to an operation voltage of 400 VRMS or DC.
Agency Approvals
* * * * UL1577, File No. E52744 System Code J CSA 93751 BSI IEC60950 IEC60065 DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1
Order Information
Part SFH620A-1 SFH620A-2 SFH620A-3 SFH6206-1 SFH6206-2 Remarks CTR 40 - 125 %, DIP-4 CTR 63 - 200 %, DIP-4 CTR 100 - 320 %, DIP-4 CTR 40 - 125 %, SMD-4 CTR 63 - 200 %, SMD-4 CTR 100 - 320 %, SMD-4 CTR 40 - 125 %, DIP-4 mil (option 6) CTR 63 - 200 %, DIP-4 mil (option 6) CTR 63 - 200 %, SMD-4 (option 7) CTR 100 - 320 %, DIP-4 mil (option 6)
Description
The SFH620A (DIP) and SFH6206 (SMD) feature a high current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 or SMD package. The coupling devices are designed for signal transmission between two electrically separated circuits.
SFH6206-3 SFH620A-1-X006 SFH620A-2-X006 SFH620A-2-X007 SFH620A-3-X006
For additional information on the available options refer to Option Information.
Document Number 83675 Rev. 1.6, 01-Dec-05
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SFH620A / SFH6206
Vishay Semiconductors Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Reverse voltage DC Forward current Surge forward current Power dissipation tp 10 s Test condition Symbol VR IF IFSM Pdiss Value 6.0 60 2.5 100 Unit V mA A mW
Output
Parameter Collector-emitter voltage Emitter-collector voltage Collector current tp 1.0 ms Power dissipation Test condition Symbol VCE VEC IC IC Pdiss Value 70 7.0 50 100 150 Unit V V mA mA mW
Coupler
Parameter Isolation test voltage between emitter and detector, refer to climate DIN 40046, part 2, Nov.74 Creepage Clearance Insulation thickness between emitter and detector Comparative tracking index per DIN IEC 112/VDEO 303, part 1 Isolation resistance VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C Storage temperature range Ambient temperature range Junction temperature Soldering temperature max. 10 s. dip soldering distance to seating plane 1.5 mm RIO RIO Tstg Tamb Tj Tsld Test condition Symbol VISO Value 5300 Unit VRMS
7.0 7.0 4.0 175 1012 1011 - 55 to + 150 - 55 to + 100 100 260
mm mm mm
C C C C
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Document Number 83675 Rev. 1.6, 01-Dec-05
SFH620A / SFH6206
Vishay Semiconductors Electrical Characteristics
Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter Forward voltage Capacitance Thermal resistance Test condition IF = 60 mA VR = 0 V, f = 1.0 MHz Symbol VF CO Rthja Min Typ. 1.25 50 750 Max 1.65 Unit V pF C/W
Output
Parameter Collector-emitter capacitance Thermal resistance Test condition VCE = 5.0 V, f = 1.0 MHz Symbol CCE Rthja Min Typ. 6.8 500 Max Unit pF C/W
Coupler
Parameter Collector-emitter saturation voltage Coupling capacitance Collector-emitter leakage current VCE = 10 V SFH620A-1 SFH6206-1 SFH620A-2 SFH6206-2 SFH620A-3 SFH6206-3 Note: Still air, coupler soldered to PCB or base Test condition IF = 10 mA, IC = 2.5 mA Part Symbol VCEsat CC ICEO ICEO ICEO Min Typ. 0.25 0.2 2.0 2.0 5.0 50 50 100 Max 0.4 Unit V pF nA nA nA
Current Transfer Ratio
Parameter IC/IF Test condition VCE = 5.0 V, IF = 10 mA Part SFH620A-1 SFH6206-1 SFH620A-2 SFH6206-2 SFH620A-3 SFH6206-3 VCE = 5.0 V, IF = 1.0 mA SFH620A-1 SFH6206-1 SFH620A-2 SFH6206-2 SFH620A-3 SFH6206-3 Symbol CTR CTR CTR CTR CTR CTR Min 40 63 100 13 22 34 30 45 70 Typ. Max 125 200 320 Unit % % % % % %
Document Number 83675 Rev. 1.6, 01-Dec-05
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SFH620A / SFH6206
Vishay Semiconductors
IF
RL = 75 VCC = 5 V IC
47
isfh620a_08
Figure 1. Switching Times Linear Operation (without saturation)
Switching Characteristics
Parameter Turn-on Time Rise Time Turn-off Time Fall Time Cut-off frequency Test condition RL = 75 , IF = 10 mA, VCC = 5.0 V RL = 75 , IF = 10 mA, VCC = 5.0 V RL = 75 , IF = 10 mA, VCC = 5.0 V RL = 75 , IF = 10 mA, VCC = 5.0 V RL = 75 , IF = 10 mA, VCC = 5.0 V Symbol ton tr toff tf fctr Min Typ. 3.0 2.0 2.3 2.0 250 Max Unit s s s s kHz
Typical Characteristics (Tamb = 25 C unless otherwise specified)
IF = 10 mA, VCE = 5.0 V
isfh620a_01 isfh620a_02
Figure 2. Current Transfer Ratio (CTR) vs. Temperature
Figure 3. Output Characteristics (typ.) Collector Current vs. Collector-Emitter Voltage
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Document Number 83675 Rev. 1.6, 01-Dec-05
SFH620A / SFH6206
Vishay Semiconductors
isfh620a_03
isfh620a_06
Figure 4. Diode Forward Voltage (typ.) vs. Forward Current
Figure 7. Permissible Power Dissipation vs. Ambient Temperature
f = 1.0 MHz
isfh620a_04
isfh620a_07
Figure 5. Transistor Capacitance (typ.) vs. Collector-Emitter Voltage
Figure 8. Permissible Diode Forward Current vs. Ambient Temperature
Pulse cycle D = parameter,
isfh620a_05
Figure 6. Permissible Pulse Handling Capability Forward Current vs. Pulse Width
Document Number 83675 Rev. 1.6, 01-Dec-05
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SFH620A / SFH6206
Vishay Semiconductors Package Dimensions in Inches (mm)
2 1 pin one ID
0.255 (6.48) 0.268 (6.81)
ISO Method A
3
4
0.179 (4.55) 0.190 (4.83) 0.030 (0.76) 0.045 (1.14) 0.031 (0.79) typ. 0.050 (1.27) typ. 0.130 (3.30) 0.150 (3.81) 4 typ. 0.018 (0.46) 0.022 (0.56) 10 0.020 (0.508) 0.035 (0.89) 0.050 (1.27) 0.100 (2.54) 3 - 9 0.300 (7.62) typ.
0.230 (5.84) 0.250 (6.35) 0.110 (2.79) 0.130 (3.30)
i178027
0.008 (0.20) 0.012 (0.30)
Package Dimensions in Inches (mm)
SMD
pin one ID 0.255 (6.48) 0.268 (6.81)
0.030 (0.76) 0.100 (2.54) R 0.010 (0.25) 0.070 (1.78) 0.315 (8.00) min 0.435 (11.05) 0.060 (1.52)
3
4
0.179 (4.55) 0.190 (4.83) 0.030 (0.76) 0.045 (1.14) 0.031 (0.79) typ. 0.130 (3.30) 0.150 (3.81)
ISO Method A
0.375 (9.52) 0.395 (10.03) 0.296 (7.52) 0.312 (7.90) 10 0.010 (0.25) typ.
i178029_1
4 typ. 1.00 (2.54)typ. 0.050 (1.27) typ.
0.098 (0.249) 0.035 (0.102) Lead coplanarity 0.004 max.
0.315 (8.00) min. 0.020 (0.508) 0.040 (1.02)
3 - 7
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Document Number 83675 Rev. 1.6, 01-Dec-05
SFH620A / SFH6206
Vishay Semiconductors
Option 6
0.407 (10.36) 0.391 (9.96) 0.307 (7.8) 0.291 (7.4) 0.028 (0.7) MIN.
Option 7
0.300 (7.62) TYP .
0.180 (4.6) 0.160 (4.1) 0.315 (8.0) MIN.
0.014 (0.35) 0.010 (0.25) 0.400 (10.16) 0.430 (10.92)
0.331 (8.4) MIN. 0.406 (10.3) MAX.
Document Number 83675 Rev. 1.6, 01-Dec-05
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SFH620A / SFH6206
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 83675 Rev. 1.6, 01-Dec-05
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 Revision: 08-Apr-05
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